linear integrated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 490 - 9160 ? fax: 510 353 - 0261 doc 201132 11 /18 /15 rev #a 8 ecn# ls5911 ls 5912 ls 5912c features improved replacement for siliconix, fairchild, & national: 2n5911 & 2n5912 low noise (10khz) e n ~ 4nv/hz high transconductance (100mhz) g fs 4000s absolute maximum ratings 1 @ 25 c (unless otherwise stated) maximum temperatures stor age temperature - 5 5 to +150 c operating junction temperature - 55 to +150 c maximum power dissipation continuous power dissipation (total) 4 500mw maximum currents gate current 50ma maximum voltages gate to drain - 25v gate to source - 25v static electrical characteristics @25 c (unless otherwise stated) sym. characteristic typ ls5911 LS5912 LS5912c unit conditions min max min max min max bv gss gate to source breakdown voltage - 25 - 25 - 25 v i g = - 1a, v ds = 0v v gs(off) gate to source cutoff voltage - 1 - 5 - 1 - 5 - 1 - 5 v ds = 10v, i d = 1na v gs(f) gate to source forward voltage 0.7 i g = 1ma, v ds = 0v v gs gate to source voltage - 0.3 - 4 - 0.3 - 4 - 0.3 - 4 v dg = 10v, i g = 5ma i dss drain to s ource saturation current 2 7 40 7 40 7 40 ma v ds = 10v, v gs = 0v i gss gate leakage current - 1 - 50 - 50 - 50 pa v gs = - 15v, v ds = 0v i g gate operating current - 1 - 50 - 50 - 50 v dg = 10v, i d = 5ma ig1g2 gate to gate isolation current 1 1 1 ua v g 1 - v g2 = 25v id = i s = 0 matching electrical characteristics @25 c (unless otherwise stated) symbol characteristic typ ls5911 LS5912 LS5912c unit conditions min max min max min max differential gate to source cutoff vo ltage 10 15 40 mv v dg = 10v, i d = 5ma dif ferential gate to source voltage change with temperature 20 40 40 v/c v dg = 10v, i d = 5ma t a = - 55 to +125c saturation drain current ratio 0.95 1 0.95 1 0.95 1 v ds = 10v, v gs = 0v notes 2, 3 differential gate current 20 20 20 na v dg = 10v, i d = 5ma t a = +125c forward transconductance ratio 0.95 1 0.95 1 0.95 1 v ds = 10v, i d = 5ma f = 1khz 3 cmrr common mode rejection ratio 85 db v dg = 5v to 10v i d = 5ma ls5911 LS5912 LS5912c improved low noise wideband monolithic dual n - channel jfet amplifier top view sot - 23 top view gs2 gs1 v v ? t v v gs2 gs1 ? dss2 dss1 i i g2 g1 i i ? fs 2 fs 1 g g 1 3 2 sot-23 top view 6 4 5 s2 d2 g2 g1 d1 s1 1 2 3 4 8 7 6 5 pdip-a s1 d1 ss g1 g2 ss d2 s2 1 2 3 4 8 7 6 5 soic-a s1 d1 ss g1 g2 ss d2 s2 1 2 3 4 8 7 6 5 pdip-b s1 d1 g1 nc nc g2 d2 s2 1 2 3 4 8 7 6 5 soic-b s1 d1 g1 nc nc g2 d2 s2
linear integrated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 490 - 9160 ? fax: 510 353 - 0261 doc 201132 11 /18 /15 rev #a 8 ecn# ls5911 ls 5912 ls 5912c dynamic electrical characteristics @25 c (unless otherwise stated) sym. characteristic typ ls5911 LS5912 LS5912c unit conditions min max min max min max g fs forward transconductance f = 1khz 4000 10000 4000 10000 4000 10000 s v dg = 10v, i d = 5ma f = 100mhz 7000 g os output conductance f = 1khz 100 100 100 f = 100mhz 120 c iss input capacitance 5 5 5 pf v dg = 10v, i d = 5ma f = 1mhz c rss reverse transfer capacitance 1.2 1.2 1.2 nf noise figure 1 1 1 db v dg = 10v, i d = 5ma f = 10khz, r g = 100k e n equivalent input noise voltage f = 100hz 7 20 20 20 nv/hz v dg = 10v, i d = 5ma f = 100hz f = 10khz 4 10 10 10 nv/hz v dg = 10v, i d = 5ma f = 10khz please contact the factory regarding the availability of optional packages. 1 pdip dimensions in inches 2 3 4 5 6 7 8 0.145 0.170 0.060 0.100 0.250 0.375 0.038 0.295 0.320 1 soic 2 3 4 5 6 7 8 dimensions in inches 0.2284 0.2440 0.189 0.196 0.0075 0.0098 0.021 0.014 0.018 0.050 0.0040 0.0098 0.150 0.157 1 2 3 4 8 7 6 5 pdip-a s1 d1 ss g1 g2 ss d2 s2 1 2 3 4 8 7 6 5 soic-a s1 d1 ss g1 g2 ss d2 s2 1 2 3 4 8 7 6 5 pdip-b s1 d1 g1 nc nc g2 d2 s2 1 2 3 4 8 7 6 5 soic-b s1 d1 g1 nc nc g2 d2 s2 1 3 5 sot-23 dimensions in millimeters 2 4 6 0.95 1.90 1.50 1.75 2.60 3.00 0.35 0.50 2.80 3.00 0.90 1.30 0.00 0.15 0.09 0.20 0.10 0.60
linear integrated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 490 - 9160 ? fax: 510 353 - 0261 doc 201132 11 /18 /15 rev #a 8 ecn# ls5911 ls 5912 ls 5912c notes 1. absolute maximum ratings are limiting values above which serviceability may be impaired. 2. pulse test: pw 300s duty cycle 3% 3. assumes smaller value in numerator. 4. derate 4mw/c above 25c. information furnished by linear integrated systems is believed to be accurate and reliable. however, no responsibility is ass umed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of linear integrated systems. linear integrated systems (lis) is a 25 - year - old, third - generation precision semiconductor company providing high - quality discrete components. expertise brought to lis is based on processes and products developed at amelco, union carbide, intersil and micro power systems by company presiden t john h. hall. hall, a protg of silicon valley legend dr. jean hoerni, was the director of ic development at union carbide, co - founder and vice president of r&d at intersil, and founder/president of micro power systems.
|
